SHOT-NOISE SUPPRESSION IN RESONANT-TUNNELING

被引：49

作者：

LIU, HC

LI, JM

AERS, GC

LEAVENS, CR

BUCHANAN, M

WASILEWSKI, ZR

机构：

[1] Institute for Microsctructural Sciences, National Research Council, Ottawa

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.51.5116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Substantial shot-noise suppression has been observed in a series of asymmetric double-barrier resonant-tunneling diodes. The suppression is only seeen in the voltage range where the peak resonant-tunneling transmission coefficient is near unity and where there is a large charge buildup in the quantum well; in other voltage ranges, full shot noise is observed. © 1995 The American Physical Society.

引用

页码：5116 / 5120

页数：5

共 15 条

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