INSITU CR GETTERING IN POLYCRYSTALLINE SILICON SHEETS OBTAINED BY EDGE-DEFINED FILM-FED GROWTH

被引：11

作者：

PIVAC, B

BORGHESI, A

SASSELLA, A

KALEJS, J

BATHEY, BR

机构：

[1] UNIV MODENA, DIPARTIMENTO FIS, I-41100 MODENA, ITALY

[2] UNIV PAVIA, DIPARTIMENTO FIS A VOLTA, I-27100 PAVIA, ITALY

[3] MOBIL SOLAR ENERGY CORP, BILLERICA, MA 01821 USA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期

关键词：

D O I：

10.1063/1.109631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gettering of Cr during the growth of silicon sheets from a Cr-doped melt is observed when the solid/liquid interface region is exposed to CO or CO2 gases. The gettering occurs within a region about 1-mum wide at the surface of the crystal, where a large accumulation of carbon and oxygen is detected. Mechanisms for carbon and oxygen participation in forming gettering sites for Cr are examined.

引用

页码：2664 / 2666

页数：3

共 20 条

[1] EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J].

BAKER, JA ;

TUCKER, TN ;

MOYER, NE ;

BUSCHERT, RC .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4365-&

[2] SOLAR-GRADE SILICON [J].

BATHEY, BR ;

CRETELLA, MC .

JOURNAL OF MATERIALS SCIENCE, 1982, 17 (11) :3077-3096

[3] ELECTROCHEMICAL AND AES STUDIES OF FE-CR SURFACE ALLOYS FORMED ON AISI-52100 STEEL BY ION-BEAM MIXING [J].

CHAN, WK ;

CLAYTON, CR ;

ALLAS, RG ;

GOSSETT, CR ;

HIRVONEN, JK .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :857-865

[4] IMPURITIES IN SILICON SOLAR-CELLS [J].

DAVIS, JR ;

ROHATGI, A ;

HOPKINS, RH ;

BLAIS, PD ;

RAICHOUDHURY, P ;

MCCORMICK, JR ;

MOLLENKOPF, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :677-687

[5]

Feng S. Q., 1986, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, P439

[6]

Gleichmann R., 1985, Impurity Diffusion and Gettering in Silicon Symposium, P181

[7]

Gosele U., 1986, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, P419

[8] SEGREGATION AND IMPURITY EFFECTS IN SILICON GROWN FROM THE MELT IN THE PRESENCE OF 2ND PHASE FORMATION [J].

KALEJS, JP ;

BATHEY, B ;

DUBE, C .

JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :174-180

[9]

KOLBESEN BO, 1983, AGGREGATION PHENOMEN, P155

[10]

MACKINTOSH B, 1981, 3RD P EC PHOTOVOLTAI, P533

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