STABILITY OF BORON-INDUCED AND GALLIUM-INDUCED SURFACE-STRUCTURES ON SI(111) DURING DEPOSITION AND EPITAXIAL-GROWTH OF SILICON

被引：49

作者：

HEADRICK, RL

FELDMAN, LC

ROBINSON, IK

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 05期

关键词：

D O I：

10.1063/1.101869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：442 / 444

页数：3

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