ORDERING AT SI(111)/A-SI AND SI(111)/SIO2 INTERFACES

被引：98

作者：

ROBINSON, IK ^{[1
]}

WASKIEWICZ, WK ^{[1
]}

TUNG, RT ^{[1
]}

BOHR, J ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB, UPTON, NY 11973 USA

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 57卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.57.2714

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2714 / 2717

页数：4

共 20 条

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[3] MODEL-INDEPENDENT STRUCTURE DETERMINATION OF THE INSB(111)2X2 SURFACE WITH USE OF SYNCHROTRON X-RAY-DIFFRACTION
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[5] ROTATIONAL TRANSITION OF INCOMMENSURATE KR MONOLAYERS ON GRAPHITE
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[6] MEASUREMENT OF THE SILICON (111) SURFACE CONTRACTION
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[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (03) : 236 - 239
[7] X-RAY-DIFFRACTION STUDY OF THE GE(001) RECONSTRUCTED SURFACE
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[8] PRESERVATION OF A 7 X 7 PERIODICITY AT A BURIED AMORPHOUS-SI/SI(111) INTERFACE
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FELDMAN, LC
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (04) : 355 - 358
[9] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4122 - 4127
[10] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671

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