REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND AUGER-ELECTRON SPECTROSCOPIC STUDY ON B/SI(111) SURFACES

被引：68

作者：

HIRAYAMA, H

TATSUMI, T

AIZAKI, N

机构：

来源：

SURFACE SCIENCE | 1988年 / 193卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(88)90316-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：L47 / L52

页数：6

共 10 条

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[6] UNOCCUPIED SURFACE-STATES REVEALING THE SI(111)SQUARE-ROOT-3XSQUARE-ROOT-3-AL, SI(111)SQUARE-ROOT-3XSQUARE-ROOT-3-GA, AND SI(111)SQUARE-ROOT-3XSQUARE-ROOT-3-IN ADATOM GEOMETRIES [J].

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NORTHRUP, JE .

PHYSICAL REVIEW LETTERS, 1984, 53 (07) :683-686

[8] BORON HEAVY DOPING FOR SI MOLECULAR-BEAM EPITAXY USING A HBO2 SOURCE [J].

TATSUMI, T ;

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APPLIED PHYSICS LETTERS, 1987, 50 (18) :1234-1236

[9] ADVANCED TECHNIQUES TO DECREASE DEFECT DENSITY IN MOLECULAR-BEAM EPITAXIAL SILICON FILMS [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (04) :L227-L229

[10] PHOTOEMISSION-STUDY OF THE SURFACE AND BULK ELECTRONIC-STRUCTURES OF SI(111)7X7 AND SI(111) SQUARE-ROOT-3X3-SQUARE-ROOT-AL [J].

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