HIGH-ACCURACY STRUCTURE-FACTOR MEASUREMENTS IN GERMANIUM

被引:22
作者
DEUTSCH, M [1 ]
HART, M [1 ]
CUMMINGS, S [1 ]
机构
[1] UNIV MANCHESTER, SCHUSTER LAB, MANCHESTER M13 9PL, LANCS, ENGLAND
关键词
D O I
10.1103/PhysRevB.42.1248
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Structure factors Fh of five reflections in the range 0.15 sin1.07 A-1 were measured in germanium. An accuracy of 20 millielectron per atom was achieved for all values except one. This represents 1 order of magnitude improvement over previous measurements for the three highest-order Fh. Measurements were done using the W K±1 line (E=59.3 keV) and a monolithic thin-crystal Laue-case diffractometer, the rocking curves of which were computer fitted to yield Fh. Good agreement is obtained with previous measurements, where available. The bonding contribution to F111 is found to be larger than predicted by ab initio calculations. No evidence is found for an anharmonic contribution to the atomic potential, within the accuracy of the measurements. This is in keeping with x-ray results for silicon, but in contrast with neutron and x-ray forbidden reflection measurements. The Debye parameter B=(0.5661±0.0026) A2 derived from our data is in excellent agreement with older results. © 1990 The American Physical Society.
引用
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页码:1248 / 1253
页数:6
相关论文
共 50 条
[1]   ELECTRON-DISTRIBUTION IN SILICON .2. THEORETICAL INTERPRETATION [J].
ALDRED, PJE ;
HART, M .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) :239-254
[2]   ELECTRON-DISTRIBUTION IN SILICON .1. EXPERIMENT [J].
ALDRED, PJE ;
HART, M .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) :223-+
[3]  
[Anonymous], 1974, INT TABLES XRAY CRYS, VIV
[4]  
BAKER JFC, 1973, Z NATURFORSCH A, VA 28, P553
[5]   X-RAY-SCATTERING FACTORS OF CRYSTALLINE SILICON AND GERMANIUM FROM A BOND CHARGE MODEL [J].
BALBAS, LC ;
RUBIO, A ;
ALONSO, JA ;
MARCH, NH ;
BORSTEL, G .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (09) :1013-1017
[6]   PENDELLOSUNG MEASUREMENT OF ATOMIC SCATTERING FACTOR OF GERMANIUM [J].
BATTERMA.BW ;
PATEL, JR .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1882-&
[7]   VIBRATIONAL AMPLITUDES IN GERMANIUM AND SILICON [J].
BATTERMAN, BW ;
CHIPMAN, DR .
PHYSICAL REVIEW, 1962, 127 (03) :690-&
[8]   THE MEASUREMENT OF THE X-RAY-SCATTERING FACTORS OF SILICON FROM THE FINE-STRUCTURE OF LAUE-CASE ROCKING CURVES [J].
BONSE, U ;
TEWORTE, R .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1980, 13 (OCT) :410-416
[9]  
BONSE U, 1979, XRAY OPTICS