A NEW SELF-CONSISTENT MODELING APPROACH TO INVESTIGATING MOSFET DEGRADATION

被引：13

作者：

HANSCH, W ^{[1
]}

VONSCHWERIN, A ^{[1
]}

HOFMANN, F ^{[1
]}

机构：

[1] INTERUNIV MICROELECTR CTR,B-3030 LOUVAIN,BELGIUM

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 09期

关键词：

D O I：

10.1109/55.62956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a completely self-consistent calculation of the time dependence of the dc stress experiment. This calculation monitors the amount and location of charges built up in the 2D oxide region during the stress time. Our model includes competing trap mechanisms such as the formation of interface states and fixed oxide traps. This enables us to consider n- and p-channel MOSFET’s with the same model. We compare our calculations to dc stress measurements on n- and p-channel devices with gate lengths L = 0.65 μm that are typical for 16-Mb DRAM’s. © 1990 IEEE

引用

页码：362 / 364

页数：3

共 18 条

[1]

Baba S., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P734

[2] HOT-CARRIER EFFECTS IN N-CHANNEL MOS-TRANSISTORS UNDER ALTERNATING STRESS CONDITIONS [J].