HOT-CARRIER EFFECTS IN N-CHANNEL MOS-TRANSISTORS UNDER ALTERNATING STRESS CONDITIONS

被引：45

作者：

BELLENS, R

HEREMANS, P

GROESENEKEN, G

MAES, HE

机构：

[1] IMEC, Heverlee, Belg, IMEC, Heverlee, Belg

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

SEMICONDUCTOR DEVICES; MOS; -; Stresses;

D O I：

10.1109/55.700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge pumping measurements show the so-called 'enhanced' degradation under alternating stress conditions, as concluded before on the basis of threshold-voltage (or transconductance) shifts only, can be totally explained by the masking of interface traps by channel shortening and compensation of trapped charge during the degradation.

引用

收藏

页码：232 / 234

页数：3

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