SELECTIVE ORDER-DISORDER TRANSITION IN GAINP/AIGAINP - A NEW APPROACH FOR THE DEFINITION OF BURIED QUANTUM WIRES

被引：6

作者：

HAMISCH, Y ^{[1
]}

STEFFEN, R ^{[1
]}

OSHINOWO, J ^{[1
]}

FORCHEL, A ^{[1
]}

RONTGEN, P ^{[1
]}

机构：

[1] IBM CORP,RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.585975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Buried semiconductor wires have been fabricated using the order/disorder transition in GaInP/AlGaInP due to ion implantation and annealing. The transition has been investigated as a function of annealing temperature and implantation dose. In order to induce this transition locally, gold wires were defined as implantation masks by a lift-off process. After low dose implantation and annealing a lateral potential well is formed, due to the band gap difference between the ordered and the disordered state. The photoluminescence even of the narrowest wire structures shows two sharp and well separated emission bands, due lo the recombination in the masked wire areas and in the lateral barrier.

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页码：2864 / 2867

页数：4

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