FABRICATION AND OPTICAL CHARACTERIZATION OF QUANTUM WIRES FROM SEMICONDUCTOR-MATERIALS WITH VARYING IN CONTENT

被引:38
作者
MAILE, BE
FORCHEL, A
GERMANN, R
GRUTZMACHER, D
MEIER, HP
REITHMAIER, JP
机构
[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,W-5100 AACHEN,GERMANY
[2] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND
[3] SIEMENS AG,RES LABS,W-8000 MUNICH 83,GERMANY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期
关键词
D O I
10.1116/1.584642
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2030 / 2033
页数:4
相关论文
共 11 条
  • [1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
    ARAKAWA, Y
    SAKAKI, H
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
  • [2] NANOMETER LITHOGRAPHY FOR III-V SEMICONDUCTOR WIRES USING CHLOROMETHYLATED POLY-ALPHA-METHYLSTYRENE RESIST
    MAILE, BE
    FORCHEL, A
    GERMANN, R
    MENSCHIG, A
    MEIER, HP
    GRUTZMACHER, D
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2308 - 2311
  • [3] IMPACT OF SIDEWALL RECOMBINATION ON THE QUANTUM EFFICIENCY OF DRY ETCHED INGAAS/INP SEMICONDUCTOR WIRES
    MAILE, BE
    FORCHEL, A
    GERMANN, R
    GRUTZMACHER, D
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (16) : 1552 - 1554
  • [4] MAYER G, UNPUB
  • [5] OBSERVATION OF DISCRETE ELECTRONIC STATES IN A ZERO-DIMENSIONAL SEMICONDUCTOR NANOSTRUCTURE
    REED, MA
    RANDALL, JN
    AGGARWAL, RJ
    MATYI, RJ
    MOORE, TM
    WETSEL, AE
    [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (06) : 535 - 537
  • [6] SZE SM, 1969, PHYSICS SEMICONDUCTO, P71
  • [7] QUANTUM TRANSPORT IN AN ELECTRON-WAVE GUIDE
    TIMP, G
    CHANG, AM
    MANKIEWICH, P
    BEHRINGER, R
    CUNNINGHAM, JE
    CHANG, TY
    MANKIEWICH, P
    BEHRINGER, R
    CUNNINGHAM, JE
    CHANG, TY
    HOWARD, RE
    [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (06) : 732 - 735
  • [8] QUANTIZED CONDUCTANCE OF POINT CONTACTS IN A TWO-DIMENSIONAL ELECTRON-GAS
    VANWEES, BJ
    VANHOUTEN, H
    BEENAKKER, CWJ
    WILLIAMSON, JG
    KOUWENHOVEN, LP
    VANDERMAREL, D
    FOXON, CT
    [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (09) : 848 - 850
  • [9] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME IN P-TYPE GALLIUM ARSENIDE
    VILMS, J
    SPICER, WE
    [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2815 - &
  • [10] MEASUREMENT OF DIFFUSION LENGTHS IN DIRECT-GAP SEMICONDUCTORS BY ELECTRON-BEAM EXCITATION
    WITTRY, DB
    KYSER, DF
    [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 375 - &