IRON DOPED BULK SEMIINSULATING GAAS

As an acceptor dopant with a solid:liquid distribution coefficient k(s) < 1, iron is an example of an impurity which can be used in modest amounts to ensure that an adequate fraction of EL2 midgap defects are ionized along the length of a melt-grown GaAs crystal, as desired for semi-insulating behavior. The results of such deliberate doping with iron (when N(Fe) is in the mid-10(15) cm-3 range) are reported for crystals grown by both the liquid encapsulated Czochralski and the vertical gradient freeze methods. Except in the very tail region of such crystals (when N(Fe) > N(EL2) and high resistivity p-type behavior results), GaAs with this modest iron modification to the compensation balance behaves with quite ordinary semi-insulating properties. The iron acceptors are then all ionized, and are optically ''invisible.''