AN IMPROVED MODEL FOR ANALYZING HOLE MOBILITY AND RESISTIVITY IN P-TYPE SILICON DOPED WITH BORON, GALLIUM, AND INDIUM

被引：29

作者：

LINARES, LC ^{[1
]}

LI, SS ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

关键词：

D O I：

10.1149/1.2127466

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：601 / 608

页数：8

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