A MODEL FOR ANALYZING THE INTERFACE PROPERTIES OF A SEMICONDUCTOR INSULATOR SEMICONDUCTOR STRUCTURE .1. CAPACITANCE AND CONDUCTANCE TECHNIQUES

被引：18

作者：

CHEN, HS ^{[1
]}

LI, SS ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 07期

关键词：

D O I：

10.1109/16.141241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model is presented for analyzing the interface properties of a semiconductor-insulator-semiconductor (SIS) capacitor structure. By introducing a coupling factor, conventional metal-oxide-semiconductor (MOS) capacitor theory is extended to analyze the interface properties of the film/buried-oxide/substrate interfaces of a silicon-on-insulator (SOI) material. Using this model we have determined parameters such as doping concentration, buried oxide thickness, fixed oxide charge, and interface trap density from the SIMOX (Separation by IMplantation of OXygen) based SIS capacitors.

引用

收藏

页码：1740 / 1746

页数：7

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