CHARACTERIZATION OF FRONT AND BACK SI-SIO2 INTERFACES IN THICK-FILM AND THIN-FILM SILICON-ON-INSULATOR MOS STRUCTURES BY THE CHARGE-PUMPING TECHNIQUE

被引：43

作者：

WOUTERS, DJ

TACK, MR

GROESENEKEN, GV

MAES, HE

CLAEYS, CL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1746 / 1750

页数：5

共 16 条

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