EXTENDED X-RAY ABSORPTION FINE-STRUCTURE AND X-RAY STANDING WAVE STUDY OF THE CLEAN INP(110) SURFACE RELAXATION

被引:13
作者
WOICIK, JC
KENDELEWICZ, T
MIYANO, KE
COWAN, PL
RICHTER, M
KARLIN, BA
BOULDIN, CE
PIANETTA, P
SPICER, WE
机构
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2] ARGONNE NATL LAB,ARGONNE,IL 60439
[3] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305
[4] NATL SYNCHROTRON LIGHT SOURCE,UPTON,NY 11973
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期
关键词
D O I
10.1116/1.578021
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Through a unique combination of surface sensitive extended x-ray absorption fine structure (EXAFS) and x-ray standing waves (XSW), we have determined the pertinent structural parameters of the clean InP(110) surface reconstruction. We find a rotation angle of 27-degrees between the P-In chains, no change of the first neighbor P-In bond length, and a small but measurable, approximately 0.1 angstrom, expansion of the average P-P second neighbor distance. The general application of the EXAFS and XSW techniques to the study of clean surfaces will be discussed.
引用
收藏
页码:2041 / 2045
页数:5
相关论文
共 24 条
[1]  
AFASEV AM, 1989, SOV PHYS DOKL, V33, P607
[2]   DYNAMICAL DIFFRACTION OF X RAYS BY PERFECT CRYSTALS [J].
BATTERMAN, BW ;
COLE, H .
REVIEWS OF MODERN PHYSICS, 1964, 36 (03) :681-&
[3]   AN ULTRAHIGH-VACUUM DOUBLE CRYSTAL MONOCHROMATOR BEAM LINE FOR STUDIES IN THE SPECTRAL RANGE 500-4000 EV [J].
CERINO, J ;
STOHR, J ;
HOWER, N ;
BACHRACH, RZ .
NUCLEAR INSTRUMENTS & METHODS, 1980, 172 (1-2) :227-236
[4]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[5]   RECONSTRUCTION OF THE (110) SURFACES FOR III-V SEMICONDUCTORS - 5 SYSTEMS INVOLVING INDIUM OR SB [J].
CHANG, R ;
GODDARD, WA .
SURFACE SCIENCE, 1984, 144 (2-3) :311-320
[6]   PHOTOEMISSION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE FROM CLEAN AND AL-COVERED INP(110) SURFACES [J].
CHOUDHARY, KM ;
MANGAT, PS ;
MILLER, AE ;
KILDAY, D ;
FILIPPONI, A ;
MARGARITONDO, G .
PHYSICAL REVIEW B, 1988, 38 (02) :1566-1568
[7]   UNRELAXATION OF THE SEMICONDUCTOR SURFACE AT LOW-COVERAGE AG INP(110) INTERFACES AS DETERMINED BY PHOTOEMISSION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE [J].
CHOUDHARY, KM ;
MANGAT, PS ;
KILDAY, D ;
MARGARITONDO, G .
PHYSICAL REVIEW B, 1990, 41 (11) :7576-7580
[8]   LOW-COVERAGE ALKALI-METAL-INDUCED SURFACE STRUCTURAL-CHANGES IN III-V-SEMICONDUCTORS - PHOTOEMISSION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF THE NA/INP(110) INTERFACE [J].
CHOUDHARY, KM ;
MANGAT, PS ;
STARNBERG, HI ;
HURYCH, Z ;
KILDAY, D ;
SOUKIASSIAN, P .
PHYSICAL REVIEW B, 1989, 39 (01) :759-762
[9]   A HIGH-ENERGY RESOLUTION X-RAY SPECTROSCOPY SYNCHROTRON RADIATION BEAMLINE FOR THE ENERGY-RANGE 800-5000 EV [J].
COWAN, PL ;
BRENNAN, S ;
DESLATTES, RD ;
HENINS, A ;
JACH, T ;
KESSLER, EG .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1986, 246 (1-3) :154-158
[10]   PERFORMANCE OF A HIGH-ENERGY-RESOLUTION, TENDER X-RAY SYNCHROTRON RADIATION BEAMLINE [J].
COWAN, PL ;
BRENNAN, S ;
JACH, T ;
LINDLE, DW .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (07) :1603-1607