学术探索
学术期刊
新闻热点
数据分析
智能评审

EXTENDED X-RAY ABSORPTION FINE-STRUCTURE AND X-RAY STANDING WAVE STUDY OF THE CLEAN INP(110) SURFACE RELAXATION

被引：13
作者：
WOICIK, JC
KENDELEWICZ, T
MIYANO, KE
COWAN, PL
RICHTER, M
KARLIN, BA
BOULDIN, CE
PIANETTA, P
SPICER, WE
机构：
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2] ARGONNE NATL LAB,ARGONNE,IL 60439
[3] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305
[4] NATL SYNCHROTRON LIGHT SOURCE,UPTON,NY 11973
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期
关键词：
D O I：
10.1116/1.578021
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Through a unique combination of surface sensitive extended x-ray absorption fine structure (EXAFS) and x-ray standing waves (XSW), we have determined the pertinent structural parameters of the clean InP(110) surface reconstruction. We find a rotation angle of 27-degrees between the P-In chains, no change of the first neighbor P-In bond length, and a small but measurable, approximately 0.1 angstrom, expansion of the average P-P second neighbor distance. The general application of the EXAFS and XSW techniques to the study of clean surfaces will be discussed.
引用
收藏
页码：2041 / 2045
页数：5
相关论文
共 24 条
[11]   MEASUREMENT OF THE SILICON (111) SURFACE CONTRACTION [J].
DURBIN, SM ;
BERMAN, LE ;
BATTERMAN, BW ;
BLAKELY, JM .
PHYSICAL REVIEW LETTERS, 1986, 56 (03) :236-239
[12]  
KONINGSBERGER DC, CHEM ANAL, V92
[13]  
KONINGSBERGER DC, 1988, XRAY ABSORPTIONS RIN
[14]   EVIDENCE FOR A SURFACE-STATE EXCITON ON GAAS(110) [J].
LAPEYRE, GJ ;
ANDERSON, J .
PHYSICAL REVIEW LETTERS, 1975, 35 (02) :117-120
[15]   POSSIBILITY OF ADSORBATE POSITION DETERMINATION USING FINAL-STATE INTERFERENCE EFFECTS [J].
LEE, PA .
PHYSICAL REVIEW B, 1976, 13 (12) :5261-5270
[16]   CALCULATION OF THE ATOMIC GEOMETRIES OF THE (110) SURFACES OF III-V COMPOUND SEMICONDUCTORS [J].
MAILHIOT, C ;
DUKE, CB ;
CHADI, DJ .
SURFACE SCIENCE, 1985, 149 (2-3) :366-380
[17]   DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON DIFFRACTION INTENSITIES FROM INP (110) [J].
MEYER, RJ ;
DUKE, CB ;
PATON, A ;
TSANG, JC ;
YEH, JL ;
KAHN, A ;
MARK, P .
PHYSICAL REVIEW B, 1980, 22 (12) :6171-6183
[18]   X-RAY-STANDING-WAVE ATOM LOCATION IN HETEROPOLAR CRYSTALS AND THE PROBLEM OF EXTINCTION [J].
PATEL, JR ;
GOLOVCHENKO, JA .
PHYSICAL REVIEW LETTERS, 1983, 50 (23) :1858-1861
[19]   NORMAL DISPLACEMENTS ON A RECONSTRUCTED SILICON (111) SURFACE - AN X-RAY STANDING-WAVE STUDY [J].
PATEL, JR ;
FREELAND, PE ;
GOLOVCHENKO, JA ;
KORTAN, AR ;
CHADI, DJ ;
QIAN, GX .
PHYSICAL REVIEW LETTERS, 1986, 57 (24) :3077-3080
[20]   AUGER AND PHOTOELECTRON CONTRIBUTIONS TO THE ELECTRON-YIELD SURFACE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE SIGNAL [J].
STOHR, J ;
NOGUERA, C ;
KENDELEWICZ, T .
PHYSICAL REVIEW B, 1984, 30 (10) :5571-5579
123