PHOTOLUMINESCENCE INVESTIGATION OF GAN FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON (100)GAAS

被引：57

作者：

HONG, CH

PAVLIDIS, D

BROWN, SW

RAND, SC

机构：

[1] Solid State Electronics Laboratory, Department of Electronic Engineering and Computational Science, University of Michigan, Ann Arbor

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.358862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubic/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3.36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted, donor-acceptor pair recombination respectively, on the basis of observed temperature and intensity dependences. A free exciton energy of 3.375 eV is deduced at 6.5 K. © 1995 American Institute of Physics.

引用

页码：1705 / 1709

页数：5

共 26 条

[11] LEI T, 1992, J APPL PHYS, V17, P4933
[12] RESONANT RAMAN SCATTERING OF TO(A1), TO(E1) AND E2 OPTICAL PHONONS IN GAN
LEMOS, V
LEITE, RCC
ARGUELLO, CA
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (10) : 1351 - &
[13] MOVPE GROWTH OF CUBIC GAN ON GAAS USING DIMETHYLHYDRAZINE
MIYOSHI, S
ONABE, K
OHKOUCHI, N
YAGUCHI, H
ITO, R
FUKATSU, S
SHIRAKI, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 439 - 442
[14] LOW-TEMPERATURE GROWTH OF GAN AND ALN ON GAAS UTILIZING METALORGANICS AND HYDRAZINE
MIZUTA, M
FUJIEDA, S
MATSUMOTO, Y
KAWAMURA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L945 - L948
[15] FUNDAMENTAL ENERGY-GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA
MONEMAR, B
[J]. PHYSICAL REVIEW B, 1974, 10 (02): : 676 - 681
[16] MURUGKAR S, 1992, B AM PHYS SOC, V37, P556
[17] EPITAXIAL-GROWTH OF CUBIC AND HEXAGONAL GAN ON GAAS BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
OKUMURA, H
MISAWA, S
YOSHIDA, S
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (09) : 1058 - 1060
[18] OPTICAL-PROPERTIES NEAR THE BAND-GAP ON HEXAGONAL AND CUBIC GAN
OKUMURA, H
YOSHIDA, S
OKAHISA, T
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (22) : 2997 - 2999
[19] GROWTH OF CUBIC PHASE GALLIUM NITRIDE BY MODIFIED MOLECULAR-BEAM EPITAXY
PAISLEY, MJ
SITAR, Z
POSTHILL, JB
DAVIS, RF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 701 - 705
[20] PANKOVE JI, 1975, RCA REV, V36, P163

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