ERROR IN SURFACE-STATE DETERMINATION CAUSED BY NUMERICAL DIFFERENTIATION OF Q-V DATA

被引：3

作者：

KIROV, K

ALEXSANDROVA, S

MINCHEV, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 02期

关键词：

D O I：

10.1016/0038-1101(78)90263-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：341 / 344

页数：4

相关论文

共 5 条

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[3] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
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[4] ERROR ANALYSIS OF SURFACE STATE DENSITY DETERMINATION USING MOS CAPACITANCE METHOD
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[5] STATIC TECHNIQUE FOR PRECISE MEASUREMENTS OF SURFACE-POTENTIAL AND INTERFACE STATE DENSITY IN MOS STRUCTURES
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