TRANSIENT BORON-DIFFUSION IN ION-IMPLANTED CRYSTALLINE AND AMORPHOUS-SILICON

被引：132

作者：

SEDGWICK, TO ^{[1
]}

MICHEL, AE ^{[1
]}

DELINE, VR ^{[1
]}

COHEN, SA ^{[1
]}

LASKY, JB ^{[1
]}

机构：

[1] IBM CORP,GTD BURLINGTON,ESSEX JUNCTION,VT 05452

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.339926

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1452 / 1463

页数：12

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[5] TRANSIENT ENHANCED DIFFUSION DURING RAPID THERMAL ANNEALING OF BORON IMPLANTED SILICON [J].

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[9]

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