ELECTRICAL PROPERTIES OF PLASTICALLY BENT P-TYPE INDIUM ANTIMONIDE BETWEEN 50 AND 200 DEGREESK

A special technique of plastic bending at elevated temperatures was applied to introduce, into a pair of simultaneously deformed, weakly p-doped, InSb single crystal bars, an excess, of indium and antimony dislocations, respectively. Hall coefficient and electrical conductivity of specimens containing an excess of In or Sb dislocations, of annealed control specimens, and of the Ge-doped starting material were measured between 50 and 200° K. Indium dislocations in Ge-doped InSb show not only an acceptor, but also a donor action; Sb dislocations show only an acceptor action. The electrostatic charge of the dislocations due to dislocation-impurity interaction has more influence on the measured energy level of indium dislocation states than on those of antimony. These results may be explained by assuming an energy level scheme in which the energy level of the indium dislocation states lies above and that of the antimony dislocation states below the acceptor level of the Ge impurity atoms. © 1969 Chapman and Hall.