DESIGN AND PERFORMANCE OF GAAS NORMALLY-OFF MESFET INTEGRATED-CIRCUITS

被引：20

作者：

SUYAMA, K

KUSAKAWA, H

FUKUTA, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.19990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1092 / 1097

页数：6

共 14 条

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