LPE AND VPE IN1-XGAXASYP1-Y-INP - TRANSPORT-PROPERTIES, DEFECTS, AND DEVICE CONSIDERATIONS

被引：34

作者：

BHATTACHARYA, PK

KU, JW

OWEN, SJT

OLSEN, GH

CHIAO, SH

机构：

[1] RCA LABS,PRINCETON,NJ 08540

[2] HEWLETT PACKARD LTD,DIV OPTO ELECTR,PALO ALTO,CA 94303

来源：

关键词：

D O I：

10.1109/JQE.1981.1071069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：150 / 161

页数：12

共 62 条

[11] CHAI YG, COMMUNICATION
[12] ELECTRICAL PROPERTIES OF S-DOPED GAXIN1-XP ALLOYS
CHEVALLIER, J
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 14 (02): : 531 - 539
[13] CHIAO SH, 1980, PROGR CRYSTAL GROWTH
[14] COLEMAN JJ, 1979, 7TH P INT S GAAS REL, P380
[15] COMPOSITION DEPENDENCE OF INFLUENCE OF LATTICE MISMATCH ON SURFACE MORPHOLOGY IN LPE GROWTH OF INGAASP ON (100)-INP)
FENG, M
TASHIMA, MM
WINDHORN, TH
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 533 - 536
[16] ANALYSIS OF POLAR OPTICAL SCATTERING OF ELECTRONS IN GAAS
FORTINI, A
DIGUET, D
LUGAND, J
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3121 - &
[17] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS
GREENE, PD
WHEELER, SA
ADAMS, AR
ELSABBAHY, AN
AHMAD, CN
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 78 - 80
[18] GROVES SH, 1979, 7TH P INT S GAAS REL
[19] VELOCITY-FIELD RELATIONSHIP OF INAS-INP ALLOYS INCLUDING EFFECTS OF ALLOY SCATTERING
HAUSER, JR
LITTLEJOHN, MA
GLISSON, TH
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (08) : 458 - 461
[20] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016