INELASTIC-SCATTERING TIMES IN METALLIC SI-P AT LOW-TEMPERATURES

被引：9

作者：

HESLINGA, DR ^{[1
]}

KLAPWIJK, TM ^{[1
]}

机构：

[1] UNIV GRONINGEN,CTR MAT SCI,9747 AG GRONINGEN,NETHERLANDS

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 84卷 / 07期

关键词：

D O I：

10.1016/0038-1098(92)90470-T

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The inelastic lifetime tau(in) in 3-dimensional Si:P layers with doping far above the metal-insulator transition is determined from the weak localization correction to the magnetoresistance in the temperature range of 1.2-4.8 K. Electron-electron interaction effects show up weakly at high magnetic fields and low temperatures. The inelastic scattering rate is determined as tau(in)-1=1.1x10(9)xT2.2. The relative contribution of electron-electron and electron-phonon scattering is discussed.

引用

页码：739 / 742

页数：4

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