ENHANCED BAND-GAP LUMINESCENCE IN STRAIN-SYMMETRIZED (SI)M/(GE)N SUPERLATTICES

被引:107
作者
MENCZIGAR, U
ABSTREITER, G
OLAJOS, J
GRIMMEISS, H
KIBBEL, H
PRESTING, H
KASPER, E
机构
[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN
[2] DAIMLER BENZ AG,FORSCHUNGSZENTRUM,W-7800 ULM,GERMANY
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 07期
关键词
D O I
10.1103/PhysRevB.47.4099
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on band-gap luminescence in strain-symmetrized, (Si)m/(Ge)n superlattices grown on a step-graded, alloy buffer with a reduced dislocation density, using Sb as a surfactant. The luminescence efficiency for a (Si)9/(Ge)6 and (Si)6/(Ge)4 SUPerlattice is strongly enhanced compared with a corresponding Si0.6Ge0.4 alloy reference sample. The luminescence signals can be attributed to interband transitions of excitons localized at potential fluctuations in the superlattice. The observed systematic shift of the band-gap luminescence to lower energies with increasing period length compares well with results of a simple, effective-mass calculation. An increasing superlattice band gap and a reduction in luminescence intensity is observed if the Si and Ge layers are interdiffused by thermal annealing. The band gap for a (Si)6/(Ge)4 superlattice was also measured with absorption spectroscopy. The absorption coefficient, as determined by direct transmission, is in the order of 10(3) cm-1 about 0.1 eV above the band gap.
引用
收藏
页码:4099 / 4102
页数:4
相关论文
共 25 条
  • [21] STRUCTURAL STABILITY OF SHORT-PERIOD SI/GE SUPERLATTICES STUDIED WITH RAMAN-SPECTROSCOPY
    SCHORER, R
    FRIESS, E
    EBERL, K
    ABSTREITER, G
    [J]. PHYSICAL REVIEW B, 1991, 44 (04) : 1772 - 1781
  • [22] OPTIMIZATION OF GROWTH-PARAMETERS FOR DIRECT BAND-GAP SI-GE SUPERLATTICES
    TURTON, RJ
    JAROS, M
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 7 (1-2): : 37 - 42
  • [23] NEAR-BAND-GAP PHOTOLUMINESCENCE OF SI-GE ALLOYS
    WEBER, J
    ALONSO, MI
    [J]. PHYSICAL REVIEW B, 1989, 40 (08): : 5683 - 5693
  • [24] WEBER J, 1990, DEFECT CONTROL SEMIC, P1453
  • [25] PHOTOLUMINESCENCE IN SHORT-PERIOD SI/GE STRAINED-LAYER SUPERLATTICES
    ZACHAI, R
    EBERL, K
    ABSTREITER, G
    KASPER, E
    KIBBEL, H
    [J]. PHYSICAL REVIEW LETTERS, 1990, 64 (09) : 1055 - 1058