COOLING SILICON SURFACE-BARRIER PARTICLE DETECTORS

[1] SILICON SURFACE BARRIER DETECTORS - FABRICATION TEST METHODS PROPERTIES AND SOME APPLICATIONS [J]. NUCLEAR INSTRUMENTS & METHODS, 1966, 40 (02): : 277 - +

[2] BERTOLINI G, 1968, SEMICONDUCTORS DETEC

[3] ON BEHAVIOUR OF HIGH RESISTIVITY SI SURFACE BARRIER DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 33 (02): : 293 - +

[4] CALLIGARIS F, 1972, TERMOTECNICA, V24, P21

[5] CALLIGARIS F, 1972, 8 CENTR RIC APPL DOC

[6] CALLIGARIS F, 1973, CRAD2 STUD RIC APPL

[7] MEASUREMENTS OF AVERAGE ENERGY PER ELECTRON-HOLE PAIR GENERATION IN SILICON BETWEEN 5-320 DEGREES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (04) : 9 - +

[8] CONSTRUCTION AND PERFORMANCES OF SILICON SURFACE BARRIER DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1964, 25 (02): : 230 - 236

[9] DEARNALEY G, 1966, SEMICONDUCTOR COUNTE

[10] INVESTIGATION OF ANOMALY IN RESPONSE OF SILICON SEMICONDUCTOR RADIATION DETECTORS AT LOW TEMPERATURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (01) : 295 - &

[1] SILICON SURFACE BARRIER DETECTORS - FABRICATION TEST METHODS PROPERTIES AND SOME APPLICATIONS [J]. NUCLEAR INSTRUMENTS & METHODS, 1966, 40 (02): : 277 - +

[2] BERTOLINI G, 1968, SEMICONDUCTORS DETEC

[3] ON BEHAVIOUR OF HIGH RESISTIVITY SI SURFACE BARRIER DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 33 (02): : 293 - +

[4] CALLIGARIS F, 1972, TERMOTECNICA, V24, P21

[5] CALLIGARIS F, 1972, 8 CENTR RIC APPL DOC

[6] CALLIGARIS F, 1973, CRAD2 STUD RIC APPL

[7] MEASUREMENTS OF AVERAGE ENERGY PER ELECTRON-HOLE PAIR GENERATION IN SILICON BETWEEN 5-320 DEGREES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (04) : 9 - +

[8] CONSTRUCTION AND PERFORMANCES OF SILICON SURFACE BARRIER DETECTORS [J]. NUCLEAR INSTRUMENTS & METHODS, 1964, 25 (02): : 230 - 236

[9] DEARNALEY G, 1966, SEMICONDUCTOR COUNTE

[10] INVESTIGATION OF ANOMALY IN RESPONSE OF SILICON SEMICONDUCTOR RADIATION DETECTORS AT LOW TEMPERATURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (01) : 295 - &