SPECTROPHOTOMETRIC THICKNESS MEASUREMENT FOR VERY THIN SIO2 FILMS ON SI

被引：18

作者：

RAND, MJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 02期

关键词：

D O I：

10.1063/1.1658750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：787 / &

共 12 条

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LANGHEINRICH, W .

SOLID-STATE ELECTRONICS, 1968, 11 (01) :59-+

[4]

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[6]

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[8]

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[9] OPTICAL THICKNESS MEASUREMENT OF SIO2-SI3N4 FILMS ON SILICON [J].

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VANGELDE.W .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :625-&

[10] A STUDY OF THE FORMATION OF ANODIC OXIDE FILMS ON URANIUM .1. AN OPTICAL REFLECTIVITY METHOD FOR DETERMINING THE KINETICS OF FILM GROWTH [J].

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