NONDESTRUCTIVE THICKNESS MEASUREMENT OF THIN FILMS ON MICROSTRUCTURES

[1] PRECISION MEASUREMENT OF ABSOLUTE SPECULAR REFLECTANCE WITH MINIMIZED SYSTEMATIC ERRORS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1960, 50 (01) : 1 - 6

[2] BOGENSCHUTZ AF, 1962, Z ANGEW PHYS, V14, P469

[3] AN INVESTIGATION OF THE OPTICAL PROPERTIES AND THE GROWTH OF OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 983 - 987

[4] THICKNESS MEASUREMENT OF SILICON DIOXIDE LAYERS BY ULTRAVIOLET-VISIBLE INTERFERENCE METHOD [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 755 - &

[5] CORL EA, 1964, SOLIDST ELECTRON, V7, P116

[6] A SIMPLE NON-DESTRUCTIVE METHOD OF MEASURING THICKNESS OF TRANSPARENT THIN FILMS BETWEEN 10 AND 600 NM [J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 59 - +

[7] FRANZ I, 1964, TELEFUNKENZEITUNG, V37, P194

[8] ANOTHER METHOD FOR DETERMINATION OF SILICON OXIDE THICKNESS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 264 - &

[9] MAYER H, 1950, WISS VERLAGSGES STUT, P116

[10] MCGALLUM JD, 1967, SCP SST, P43

[1] PRECISION MEASUREMENT OF ABSOLUTE SPECULAR REFLECTANCE WITH MINIMIZED SYSTEMATIC ERRORS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1960, 50 (01) : 1 - 6

[2] BOGENSCHUTZ AF, 1962, Z ANGEW PHYS, V14, P469

[3] AN INVESTIGATION OF THE OPTICAL PROPERTIES AND THE GROWTH OF OXIDE FILMS ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (09) : 983 - 987

[4] THICKNESS MEASUREMENT OF SILICON DIOXIDE LAYERS BY ULTRAVIOLET-VISIBLE INTERFERENCE METHOD [J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 755 - &

[5] CORL EA, 1964, SOLIDST ELECTRON, V7, P116

[6] A SIMPLE NON-DESTRUCTIVE METHOD OF MEASURING THICKNESS OF TRANSPARENT THIN FILMS BETWEEN 10 AND 600 NM [J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 59 - +

[7] FRANZ I, 1964, TELEFUNKENZEITUNG, V37, P194

[8] ANOTHER METHOD FOR DETERMINATION OF SILICON OXIDE THICKNESS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 264 - &

[9] MAYER H, 1950, WISS VERLAGSGES STUT, P116

[10] MCGALLUM JD, 1967, SCP SST, P43