LOW-COST SILICON FOR SOLAR-ENERGY APPLICATION

被引：16

作者：

SCHWUTTKE, GH ^{[1
]}

机构：

[1] IBM CORP, E FISHKILL LABS, Hopewell Jct, NY 12533 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1977年 / 43卷 / 01期

关键词：

D O I：

10.1002/pssa.2210430103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：43 / 51

页数：9

共 12 条

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[2]

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[6]

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SCHNEIDER, CP .

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[8] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].

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[9]

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[10] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .2. EDGE-DEFINED, FILM-FED GROWTH (EFG) [J].

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