MINORITY-CARRIER LIFETIME AND DEFECT STRUCTURE IN SILICON AFTER CESIUM IMPLANTATION

[1] ON THE NATURE OF RADIATION DAMAGE IN METALS [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (08) : 961 - 970

[2] PROPERTIES OF GOLD IN SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 143 - &

[3] NEW FAST TECHNIQUE FOR LARGE-SCALE MEASUREMENTS OF GENERATION LIFETIME IN SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 100 - 105

[4] FRANK W, 1973, ION IMPLANTATION SEM, P3

[5] ELECTRON MICROSCOPIC IMAGES OF SINGLE AND INTERSECTING STACKING FAULTS IN THICK FOILS .1. SINGLE FAULTS [J]. PHYSICA STATUS SOLIDI, 1963, 3 (09): : 1563 - 1593

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] GOETZBER.A, 1966, AT&T TECH J, V45, P1097

[8] Gotsberger A., 1969, APPLIED SOLID STATE, V1, P153

[9] GROVE AS, 1967, PHYS TECHNOL S, P174

[10] HAUSSERMANN F, 1972, PHILOS MAG, V25, P537, DOI 10.1080/14786437208228891

[1] ON THE NATURE OF RADIATION DAMAGE IN METALS [J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (08) : 961 - 970

[2] PROPERTIES OF GOLD IN SILICON [J]. SOLID-STATE ELECTRONICS, 1966, 9 (02) : 143 - &

[3] NEW FAST TECHNIQUE FOR LARGE-SCALE MEASUREMENTS OF GENERATION LIFETIME IN SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 100 - 105

[4] FRANK W, 1973, ION IMPLANTATION SEM, P3

[5] ELECTRON MICROSCOPIC IMAGES OF SINGLE AND INTERSECTING STACKING FAULTS IN THICK FOILS .1. SINGLE FAULTS [J]. PHYSICA STATUS SOLIDI, 1963, 3 (09): : 1563 - 1593

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] GOETZBER.A, 1966, AT&T TECH J, V45, P1097

[8] Gotsberger A., 1969, APPLIED SOLID STATE, V1, P153

[9] GROVE AS, 1967, PHYS TECHNOL S, P174

[10] HAUSSERMANN F, 1972, PHILOS MAG, V25, P537, DOI 10.1080/14786437208228891