INDIUM-PHOSPHIDE SOLAR-CELLS MADE BY ION-IMPLANTATION

被引:28
作者
KEAVNEY, CJ
SPITZER, MB
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D O I
10.1063/1.99095
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O59 [应用物理学];
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页码:1439 / 1440
页数:2
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共 13 条
[1]  
BOTHRA S, 1987, 19TH P IEEE PHOT SPE, P261
[2]  
CHOI KY, 1987, 19TH IEEE PHOT SPEC, P255
[3]   HIGH-EFFICIENCY INDIUM TIN OXIDE INDIUM-PHOSPHIDE SOLAR-CELLS [J].
COUTTS, TJ ;
NASEEM, S .
APPLIED PHYSICS LETTERS, 1985, 46 (02) :164-166
[4]  
DAVIES DE, 1981, J CRYST GROWTH, V54, P150, DOI 10.1016/0022-0248(81)90261-X
[5]   INDIUM-PHOSPHIDE SHALLOW HOMOJUNCTION SOLAR-CELLS MADE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
SPITZER, MB ;
KEAVNEY, CJ ;
VERNON, SM ;
HAVEN, VE .
APPLIED PHYSICS LETTERS, 1987, 51 (05) :364-366
[6]  
SPITZER MB, 1987, 19TH P IEEE PHOT SPE, P146
[7]   N+-P-P+ STRUCTURE INP SOLAR-CELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
SUGO, M ;
YAMAMOTO, A ;
YAMAGUCHI, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) :772-777
[8]   N-TYPE DOPING OF INP BY ION-IMPLANTATION [J].
SUSSMANN, RS .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :603-617
[9]   MINORITY-CARRIER INJECTION ANNEALING OF ELECTRON IRRADIATION-INDUCED DEFECTS IN INP SOLAR-CELLS [J].
YAMAGUCHI, M ;
ANDO, K ;
YAMAMOTO, A ;
UEMURA, C .
APPLIED PHYSICS LETTERS, 1984, 44 (04) :432-434
[10]   ROOM-TEMPERATURE ANNEALING OF RADIATION-INDUCED DEFECTS IN INP SOLAR-CELLS [J].
YAMAGUCHI, M ;
ITOH, Y ;
ANDO, K .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1206-1208