TECHNIQUE FOR PRODUCING POLYSILICON PATTERNS WITH BEVELLED EDGE PROFILES USING WET ETCHING

被引：3

作者：

BOXALL, BA

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 09期

关键词：

D O I：

10.1016/0038-1101(78)90357-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1173 / 1174

页数：2

相关论文

共 6 条

[1] MICROSTRUCTURAL ANALYSIS OF EVAPORATED AND PYROLYTIC SILICON THIN-FILMS
ANDERSON, RM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1540 - 1546
[2] CHANGE OF ETCH RATE ASSOCIATED WITH AMORPHOUS TO CRYSTALLINE TRANSITION IN CVD LAYERS OF SILICON
BOXALL, BA
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (10) : 873 - 874
[3] STRUCTURE OF CHEMICALLY DEPOSITED POLYCRYSTALLINE-SILICON FILMS
KAMINS, TI
CASS, TR
[J]. THIN SOLID FILMS, 1973, 16 (02) : 147 - 165
[4] KERN W, 1973, 11TH ANN P REL PHYS, P214
[5] STRUCTURES OF SI FILMS CHEMICALLY VAPOR-DEPOSITED ON AMORPHOUS SIO2 SUBSTRATES
NAGASIMA, N
KUBOTA, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (08) : 1105 - 1112
[6] FAILURE ANALYSIS OF EVAPORATED METAL INTERCONNECTIONS AT CONTACT WINDOWS
YANAGAWA, T
TAKEKOSHI, I
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (11) : 964 - +