ADSORPTION OF HYDROGEN AND DISILANE ON SI(100) AND SI-GE SURFACES

被引：34

作者：

WU, YM ^{[1
]}

NIX, RM ^{[1
]}

机构：

[1] UNIV LONDON,QUEEN MARY & WESTFIELD COLL,DEPT CHEM,MILE END RD,LONDON E1 4NS,ENGLAND

来源：

SURFACE SCIENCE | 1994年 / 306卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)91185-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Temperature-programmed desorption has been used to study the adsorption of hydrogen and disilane on Si(100), and epitaxial Ge and Si-Ge alloy film surfaces. Dissociative adsorption of disilane on Si(100) exhibits no deuterium kinetic isotope effect and occurs with high probability at 300 K (S0 approximately 0.5), but decreases with increasing substrate temperature (E(a) almost-equal-to -9 kJ mol-1) and is strongly suppressed at high surface hydrogen coverages. Complete removal of surface hydrogen for the Si2H6/Si(100) system only occurs at T> 800 K, but in the presence of surface Ge, hydrogen desorption from the surface is much more facile.

引用

页码：59 / 68

页数：10

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