INSB P+-N JUNCTIONS IN FORWARD BIAS

被引：2

作者：

BARBER, HD

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 03期

关键词：

D O I：

10.1016/0038-1101(68)90046-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：343 / &

共 50 条

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ALLEN, CM ;

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LIEGEY, PR .

PROCEEDINGS OF THE IEEE, 1963, 51 (05) :856-&

[2] NEW INFRA-RED DETECTORS USING INDIUM ANTIMONIDE [J].

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JOURNAL OF SCIENTIFIC INSTRUMENTS, 1957, 34 (10) :394-395

[3] POLARITY EFFECTS IN INSB ALLOYED P-N JUNCTIONS [J].

BARBER, HD ;

HEASELL, EL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :176-&

[4] METALLIC ETCHING OF INDIUM ANTIMONIDE AND GERMANIUM [J].

BARBER, HD ;

HEASELL, EL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) :635-&

[5] A TECHNIQUE FOR MAKING ALLOY P-N JUNCTIONS IN INSB [J].

BARBER, HD ;

HEASELL, EL .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :113-&

[6]

BARBER HD, TO BE PUBLISHED

[7] ESAKI DIODE IN INSB [J].

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DACEY, GC ;

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[8] INDIUM ANTIMONIDE TUNNEL DIODES IN HIGH MAGNETIC FIELDS [J].

BUTCHER, PN ;

HULBERT, JA ;

HULME, KF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 21 (3-4) :320-324

[9] MAGNETO-TUNNELING IN INSB [J].

CALAWA, AR ;

REDIKER, RH ;

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PHYSICAL REVIEW LETTERS, 1960, 5 (02) :55-57

[10] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J].

CHYNOWETH, AG ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1103-1110

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