CURRENT DEPENDENCE OF BASE COLLECTOR CAPACITANCE OF BIPOLAR-TRANSISTORS

被引：16

作者：

LIU, W ^{[1
]}

HARRIS, JS ^{[1
]}

机构：

[1] STANFORD UNIV, SOLID STATE LAB, STANFORD, CA 94305 USA

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 08期

关键词：

D O I：

10.1016/0038-1101(92)90004-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present analytical expressions for the base-collector capacitance of bipolar transistors in three operating conditions as the collector current density is continuously increased until the collector is fully depleted. A simple model is also presented to calculate this capacitance after base pushout occurs. The critical current densities separating each operating condition are discussed. The capacitance as a function of current density is calculated for various base collector biases, collector thicknesses and collector dopings. The calculated results of this simple base-collector capacitance model are in close agreement with SEDAN simulation results. In addition, these results are shown to agree with published experimental work.

引用

页码：1051 / 1057

页数：7

共 16 条

[1] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J].