BASE-COLLECTOR JUNCTION CAPACITANCE OF BIPOLAR-TRANSISTORS OPERATING AT HIGH-CURRENT DENSITIES

被引：29

作者：

LIOU, JJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期

关键词：

D O I：

10.1109/T-ED.1987.23236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2304 / 2308

页数：5

共 18 条

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[10] FORWARD-VOLTAGE CAPACITANCE AND THICKNESS OF P-N-JUNCTION SPACE-CHARGE REGIONS [J].

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