COLLECTOR CAPACITANCE AND HIGH-LEVEL INJECTION EFFECTS IN BIPOLAR-TRANSISTORS

[1] ANGEL ES, 1971, LECTURE NOTES OPERAT

[2] EQUIVALENT CIRCUIT OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR OPERATING IN SATURATION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 241 - +

[3] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 257 - 263

[4] CHARACTERISTICS OF 2-REGION SATURATION PHENOMENA [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 113 - &

[5] GRAAFF HCD, 1973, SOLID STATE ELECTRON, V16, P587

[6] EFFECT OF COLLECTOR RESISTANCE UPON HIGH CURRENT CAPABILITY OF N-P-V-N TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (07) : 654 - +

[7] SATURATION CHARACTERISTICS OF HIGH-VOLTAGE TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1384 - &

[8] HUNTER LP, 1966, INTRO SEMICONDUCTOR, P208

[9] KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[10] LINDMAYER J, 1965, FUNDAMENTALS SEMICON

[1] ANGEL ES, 1971, LECTURE NOTES OPERAT

[2] EQUIVALENT CIRCUIT OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR OPERATING IN SATURATION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 241 - +

[3] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 257 - 263

[4] CHARACTERISTICS OF 2-REGION SATURATION PHENOMENA [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 113 - &

[5] GRAAFF HCD, 1973, SOLID STATE ELECTRON, V16, P587

[6] EFFECT OF COLLECTOR RESISTANCE UPON HIGH CURRENT CAPABILITY OF N-P-V-N TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (07) : 654 - +

[7] SATURATION CHARACTERISTICS OF HIGH-VOLTAGE TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1384 - &

[8] HUNTER LP, 1966, INTRO SEMICONDUCTOR, P208

[9] KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[10] LINDMAYER J, 1965, FUNDAMENTALS SEMICON