FORMATION OF UNSTRAINED SI1-XGEX LAYERS BY HIGH-DOSE GE-74 ION-IMPLANTATION IN SIMOX

被引：14

作者：

HOLLANDER, B ^{[1
]}

MANTL, S ^{[1
]}

MICHELSEN, W ^{[1
]}

MESTERS, S ^{[1
]}

HARTMANN, A ^{[1
]}

VESCAN, L ^{[1
]}

GERTHSEN, D ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, W-5170 JULICH, GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 84卷 / 02期

关键词：

D O I：

10.1016/0168-583X(94)95758-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Single crystalline, strain relieved Si1-xGex layers were fabricated on buried, amorphous SiO2 by high-dose Ge-74 ion implantation into the Si surface layer of SIMOX structures followed by thermal treatment. Ion implantation was performed with energies between 80 and 160 keV and ion doses between 1.5x10(17) and 3x10(17) cm(-2). Rutherford backscattering spectrometry, He+ ion channeling and transmission electron microscopy were employed to characterize layer thickness, stoichiometry and crystalline quality of the newly formed Si1-xGex layers. The Ge concentration x of the resulting Si1-xGex layer can be chosen by using an appropriate implantation dose. Depending on implantation dose and energy, homogeneous Si1-xGex layers with Ge concentrations between x = 0.13 and 0.29 were obtained. Strain measurements by ion channeling confirmed complete strain relaxation of the Si1-xGex layer after annealing.

引用

页码：218 / 221

页数：4

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