DIFFUSION OF ZN ACROSS P-N-JUNCTIONS IN GA0.47IN0.53AS

被引：11

作者：

TAYLOR, SJ

BEAUMONT, B

GUILLAUME, JC

机构：

[1] Lab. de Phys. du Solide et Energie Solaire, CNRS, Valbonne

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 05期

关键词：

D O I：

10.1088/0268-1242/8/5/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report evidence obtained by secondary-ion mass spectroscopy (SIMS) and electrochemical profiling of the saturation of Zn doping and of the diffusion of Zn across p-n junctions in Ga0.47In0.53As grown on InP by organometallic vapour-phase epitaxy (OMVPE). The results are consistent with the 'kick-out' mechanism, in the context of which we propose that the diffusing species is probably a neutral Zn interstitial, I(Zn)0. Accumulation of Zn at the interface with a highly n-doped layer indicates the possible formation of Zn-donor complexes.

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页码：643 / 646

页数：4

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