DONOR-ACCEPTOR PAIR FORMATION IN INP DOPED SIMULTANEOUSLY WITH SI AND ZN DURING METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：13

作者：

BLAAUW, C

HOBBS, L

机构：

[1] Bell-Northern Research, Station C, Ottawa, Ont. K1Y 4H7

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.105361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deposition of InP by metalorganic chemical vapor deposition, simultaneously doped with both a donor (Si) and an acceptor (Zn) species during the growth, has been carried out. The incorporation of Si is not affected by the presence of Zn, but the Zn incorporation is substantially enhanced by the presence of Si. These results are consistent with the formation of donor-acceptor pairs, which has been suggested earlier to explain Zn diffusion profiles in Si-doped InP.

引用

收藏

页码：674 / 676

页数：3

相关论文

共 7 条

[1] SILICON INCORPORATION IN INP DURING LP-MOCVD USING DISILANE [J].

BLAAUW, C ;

SHEPHERD, FR ;

MINER, CJ ;

SPRINGTHORPE, AJ .

JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (01) :1-6

[2] SECONDARY ION MASS-SPECTROMETRY AND ELECTRICAL CHARACTERIZATION OF ZN DIFFUSION IN N-TYPE INP [J].

BLAAUW, C ;

SHEPHERD, FR ;

EGER, D .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :605-610

[3] POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON [J].

FAHEY, PM ;

GRIFFIN, PB ;

PLUMMER, JD .

REVIEWS OF MODERN PHYSICS, 1989, 61 (02) :289-384

[4] The diffusion of antimony in heavily doped and n- and p-type silicon [J].

Fair, R. B. ;

Manda, M. L. ;

Wortman, J. J. .

JOURNAL OF MATERIALS RESEARCH, 1986, 1 (05) :705-711

[5] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J].

REISS, H ;

FULLER, CS ;

MORIN, FJ .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :535-636

[6] FORMATION OF IN-AS COMPLEXES IN SILICON OBSERVED BY THE PERTURBED ANGULAR-CORRELATION TECHNIQUE [J].

WICHERT, T ;

SWANSON, ML ;

QUENNEVILLE, AF .

PHYSICAL REVIEW LETTERS, 1986, 57 (14) :1757-1760

[7] INDIUM-DEFECT COMPLEXES IN SILICON STUDIED BY PERTURBED ANGULAR-CORRELATION SPECTROSCOPY [J].

WICHERT, T ;

DEICHER, M ;

GRUBEL, G ;

KELLER, R ;

SCHULZ, N ;

SKUDLIK, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (01) :59-85