INDIUM-DEFECT COMPLEXES IN SILICON STUDIED BY PERTURBED ANGULAR-CORRELATION SPECTROSCOPY

被引：90

作者：

WICHERT, T

DEICHER, M

GRUBEL, G

KELLER, R

SCHULZ, N

SKUDLIK, H

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 01期

关键词：

D O I：

10.1007/BF00617764

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：59 / 85

页数：27

共 60 条

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