HYPERFINE INTERACTION AND CHANNELING STUDIES OF IMPURITIES IMPLANTED IN SILICON

被引：9

作者：

DEWAARD, H

KEMERINK, GJ

机构：

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90249-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：210 / 218

页数：9

共 30 条

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[5]

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