LASER AND THERMAL ANNEALING OF TE-IMPLANTED SILICON

被引：9

作者：

DEBRUYN, J

LANGOUCHE, G

VANROSSUM, M

POTTER, MD

COUSSEMENT, R

机构：

[1] Institut voor Kern- en Stralingsfysika, University of Leuven, Physics Department

来源：

PHYSICS LETTERS A | 1979年 / 73卷 / 04期

关键词：

D O I：

10.1016/0375-9601(79)90558-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Laser annealing of Te-implanted silicon results in a drastic change in the relative intensity of the two Mössbauer resonance lines. These results undoubtedly indicate that a reassignment of the lines has to be made. © 1979.

引用

页码：356 / 358

页数：3

共 8 条

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JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2569-2571

[2] MOSSBAUER STUDIES OF IMPLANTED I-129 IONS IN SEMICONDUCTORS AND ALKALI-HALIDES [J].

HAFEMEISTER, DW ;

WAARD, HD .

PHYSICAL REVIEW B, 1973, 7 (07) :3014-3027

[3]

JOSEPHSON WD, 1979, B AM PHYS SOC, V24, P427

[4] LATTICE LOCATION AND DOPANT BEHAVIOR OF GROUP-II AND GROUP-VI ELEMENTS IMPLANTED IN SILICON [J].

MEYER, O ;

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PICRAUX, ST ;

MAYER, JW .

SOLID STATE COMMUNICATIONS, 1970, 8 (07) :529-+

[5] LASER-BEAM ANNEALING OF HEAVILY DAMAGED IMPLANTED LAYERS ON SILICON [J].

MULLER, JC ;

GROB, A ;

GROB, JJ ;

STUCK, R ;

SIFFERT, P .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :287-289

[6] COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON [J].

NARAYAN, J ;

YOUNG, RT ;

WHITE, CW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3912-3917

[7]

ROBERTS LD, 1979, B AM PHYS SOC, V24, P427

[8]

WAARD HD, 1977, HYP INT, V5, P45

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