LASER-BEAM ANNEALING OF HEAVILY DAMAGED IMPLANTED LAYERS ON SILICON

被引：18

作者：

MULLER, JC

GROB, A

GROB, JJ

STUCK, R

SIFFERT, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 04期

关键词：

D O I：

10.1063/1.90367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：287 / 289

页数：3

共 22 条

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[9] INVESTIGATION OF LASER-INDUCED DIFFUSION AND ANNEALING PROCESSES OF ARSENIC-IMPLANTED SILICON-CRYSTALS [J].

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