STRUCTURAL LATTICE-DEFECTS IN SILICON OBSERVED AT IN-111 BY PERTURBED ANGULAR-CORRELATION

被引：14

作者：

DEICHER, M

GRUBEL, G

RECKNAGEL, E

SKUDLIK, H

WICHERT, T

机构：

来源：

HYPERFINE INTERACTIONS | 1987年 / 35卷 / 1-4期

关键词：

D O I：

10.1007/BF02394484

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

引用

页码：719 / 722

页数：4

共 9 条

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[2] PERTURBED ANGULAR-CORRELATION AND RUTHERFORD BACKSCATTERING STUDIES IN INDIUM IMPLANTED SILICON [J].

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[3] DETECTION OF ELECTRONIC PERTURBATIONS IN SILICON AFTER EC DECAY OF IN-111 OBSERVED BY PAC [J].

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WICHERT, T ;

FORKEL, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) :499-502

[4]

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[5]

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[6]

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[7]

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[8] INDIUM-VACANCY INTERACTION IN LASER-ANNEALED SILICON [J].

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PLEITER, F .

HYPERFINE INTERACTIONS, 1987, 35 (1-4) :711-713

[9] DETECTION OF IN-P AND IN-SB ATOM PAIRS BY PERTURBED ANGULAR-CORRELATION IN SILICON [J].

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APPLIED PHYSICS LETTERS, 1986, 49 (05) :265-267

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