共 29 条
[2]
ELECTRON-STATES OF AN SB-ORDERED OVERLAYER ON GAAS(110)
[J].
PHYSICAL REVIEW B,
1983, 27 (02)
:1251-1258
[3]
SURFACE ATOMIC-STRUCTURE AND BONDING OF GAAS(110)-P(1X1)-BI (1-ML)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1992, 10 (04)
:1953-1958
[4]
EXPERIMENTAL ENERGY-BAND DISPERSIONS, CRITICAL-POINTS, AND SPIN-ORBIT SPLITTINGS FOR GASB USING ANGLE-RESOLVED PHOTOEMISSION
[J].
PHYSICAL REVIEW B,
1980, 22 (06)
:2940-2944
[5]
DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML)
[J].
PHYSICAL REVIEW B,
1982, 26 (02)
:803-814
[7]
BISMUTH AND ANTIMONY ADSORPTION ON III-V(110) SUBSTRATES - GROWTH, ORDER, AND STRUCTURE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1990, 8 (04)
:940-947
[8]
FRAZEDAS J, 1991, PHYS REV B, V43, P2159
[9]
GUO GY, UNPUB
[10]
GROWTH OF BISMUTH-FILMS ON GAAS(110) STUDIED USING LOW-ENERGY ELECTRON-DIFFRACTION
[J].
PHYSICAL REVIEW B,
1990, 41 (08)
:5138-5143