ELECTRONIC BAND-STRUCTURE OF THE 2-DIMENSIONAL SURFACE-STATE BANDS OF THE (1X1) AND (1X2) PHASES OF BI/GASB(110)

被引:12
作者
MCILROY, DN
HESKETT, D
MCLEAN, AB
LUDEKE, R
MUNEKATA, H
DINARDO, NJ
机构
[1] QUEENS UNIV,DEPT PHYS,KINGSTON K7L 3N6,ONTARIO,CANADA
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[3] DREXEL UNIV,DEPT PHYS & ATMOSPHER SCI,PHILADELPHIA,PA 19104
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 16期
关键词
D O I
10.1103/PhysRevB.48.11897
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The surface-state bands of the (1 X 1) and (1 X 2) phases of Bi/GaSb(110) have been probed using angle-resolved ultraviolet photoemission spectroscopy with synchrotron radiation. Four Bi-induced surface-state bands have been identified for both the (1 X 1) and the (1 X 2) phases. The bands with the lowest binding energies (S(I) and S(II)) have been attributed to intrachain bonding in the Bi overlayer and the higher-binding-energy bands (S(III) and S(IV)) to overlayer states involved in the back bonding of the overlayer to the substrate. Based on initial-state dispersion measurements, we conclude that the Bi chains in the epitaxial overlayer remain intact throughout the phase transition. We propose a model for the overlayer structure of the (1 X 2) phase of Bi/GaSb(110).
引用
收藏
页码:11897 / 11904
页数:8
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