GROWTH OF BISMUTH-FILMS ON GAAS(110) STUDIED USING LOW-ENERGY ELECTRON-DIFFRACTION

被引：33

作者：

GUO, T ^{[1
]}

ATKINSON, RE ^{[1
]}

FORD, WK ^{[1
]}

机构：

[1] MONTANA STATE UNIV,DEPT PHYS,BOZEMAN,MT 59717

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.41.5138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of bismuth films on GaAs(110) has been studied with use of low-energy electron diffraction. The overlayer forms epitaxially in the first monolayer, two dimensionally disordered in the second, and three dimensionally at higher coverages. Below 1 monolayer an attractive interchain force directed perpendicular to the chain direction governs island formation. A (6×1) reconstruction at 1 monolayer confirms that the 24- average chain length revealed previously by scanning tunneling microscopy is part of the long-range surface order and is not indicative of an incommensurate overlayer. © 1990 The American Physical Society.

引用

页码：5138 / 5143

页数：6

共 23 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].