THE SURFACE GEOMETRY OF GAAS(110 - A RESPONSE

被引：41

作者：

DUKE, CB

PATON, A

机构：

来源：

SURFACE SCIENCE | 1985年 / 164卷 / 01期

关键词：

D O I：

10.1016/0039-6028(85)90695-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：L797 / L806

页数：10

共 30 条

[1] SURFACE-STRUCTURE AND ORBITAL SYMMETRIES OF (110) SURFACE-STATES OF GAAS
CHADI, DJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 631 - 636
[2] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082
[3] (110) SURFACE GEOMETRY OF GAAS
CHADI, DJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 383 - 383
[4] (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION
CHADI, DJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1244 - 1248
[5] INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110)
DOSE, V
GOSSMANN, HJ
STRAUB, D
[J]. SURFACE SCIENCE, 1982, 117 (1-3) : 387 - 393
[6] INVESTIGATION OF INTRINSIC UNOCCUPIED SURFACE-STATES AT GAAS(110) BY ISOCHROMAT SPECTROSCOPY
DOSE, V
GOSSMANN, HJ
STRAUB, D
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (08) : 608 - 610
[7] STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS
DUKE, CB
MEYER, RJ
PATON, A
MARK, P
KAHN, A
SO, E
YEH, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1252 - 1257
[8] ATOMIC GEOMETRY OF CLEAVAGE SURFACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS
DUKE, CB
LUBINSKY, AR
LEE, BW
MARK, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 761 - 768
[9] DISPLACEMENTS PARALLEL TO THE SURFACE OF RECONSTRUCTED GAAS(110)
DUKE, CB
PATON, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 327 - 331
[10] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM GAP(110)
DUKE, CB
PATON, A
FORD, WK
KAHN, A
CARELLI, J
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 562 - 573

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