2 MEV AS+ IMPLANTATION IN INAS

High energy ion implantation of 2 MeV As+ ions into (100) InAs was investigated using Rutherford backscattering spectrometry with 2 MeV He+ ions. The ion fluence N-I varied over a wide range between 2X10(12) cm(-2) and 5 X 10(16) cm(-2). The relative defect concentration n(pd)d(z), calculated from the backscattering spectra with the help of the computer code DICADA2, is compared to the distribution of the electronic and the nuclear energy density obtained from TRIM simulations. It is found that the defect mobility and the defect annealing during room temperature implantation are strongly influenced by the total energy density deposited into electronic processes. A similar behaviour is found for GaAs but not for InP. We believe that in the arsenides the energy deposition into electronic processes reduces the efficiency of the nuclear energy deposition for producing stable defects.