COMPARISON OF MEV-IMPLANTED GAAS AND INP

被引：10

作者：

BACHMANN, T

SCHIPPEL, S

WENDLER, E

WESCH, W

RICHTER, U

WITTHUHN, W

机构：

[1] LAB MIKRODIAGNOST HALLE,D-06120 HALLE,GERMANY

[2] UNIV ERLANGEN NURNBERG,INST PHYS,D-91058 ERLANGEN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 89卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)95166-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

GaAs and InP crystals were implanted with 1.6 MeV Ar+ and 2.0 MeV Se2+ ions in the dose range of 1 X 10(12) cm-2 Up to 3 X 10(15) cm-2 at room temperature. The investigation of the resulting damage after implantation by means of Rutherford backscatttering spectrometry shows that the same amount of nuclear energy deposition leads to different damage in the two materials for the two ion species. In GaAs pronounced self-annealing occurs which is different for the different depth regions of the implanted layer. Part of the samples were short time annealed and show an activation of 40% and high mobilities in the low ion fluence region.

引用

页码：168 / 173

页数：6

共 17 条

[1] THE MICROSTRUCTURE OF SHORT-TIME-ANNEALED SE+-IMPLANTED GAAS [J].