INVESTIGATION OF SE+-IMPLANTED GAAS-LAYERS BY TEMPERATURE-DEPENDENT DECHANNELING

被引：8

作者：

BACHMANN, T ^{[1
]}

WESCH, W ^{[1
]}

GARTNER, K ^{[1
]}

BARTSCH, H ^{[1
]}

机构：

[1] INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,O-4050 HALLE,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 12期

关键词：

D O I：

10.1063/1.347455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Semi-insulating GaAs wafers were implanted with 300-keV Se+ ions, N(i) = 1 x 10(14) cm-2, at different temperatures (300 to 513 K). Weakly damaged layers were produced in the case of implantation at elevated temperatures. Channeling measurements at different temperatures showed the existence of displaced lattice atoms with low distances r(a) from the string dominating. The influence of the damage present in the as-implanted state on the resulting electrical sheet properties after annealing by means of a graphite strip heater is discussed.

引用

页码：8072 / 8075

页数：4

共 12 条

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